Semiconductor Device and Method of Manufacture

ABSTRACT

An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. application Ser. No.15/837,957, filed on Dec. 11, 2017, and entitled “Semiconductor Deviceand Method of Manufacture,” which is a division of U.S. application Ser.No. 14/799,756, filed on Jul. 15, 2015, and entitled “SemiconductorDevice and Method of Manufacture,” now U.S. Pat. No. 9,842,826 issued onDec. 12, 2017, which applications are incorporated herein by reference.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of a variety ofelectronic components (e.g., transistors, diodes, resistors, capacitors,etc.). For the most part, this improvement in integration density hascome from repeated reductions in minimum feature size (e.g., shrinkingthe semiconductor process node towards the sub-20 nm node), which allowsmore components to be integrated into a given area. As the demand forminiaturization, higher speed and greater bandwidth, as well as lowerpower consumption and latency has grown recently, there has grown a needfor smaller and more creative packaging techniques of semiconductordies.

As semiconductor technologies further advance, stacked and bondedsemiconductor devices have emerged as an effective alternative tofurther reduce the physical size of a semiconductor device. In a stackedsemiconductor device, active circuits such as logic, memory, processorcircuits and the like are fabricated at least partially on separatesubstrates and then physically and electrically bonded together in orderto form a functional device. Such bonding processes utilizesophisticated techniques, and improvements are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a formation of reference vias along with through viasin accordance with some embodiments.

FIG. 2 illustrates a semiconductor die in accordance with someembodiments.

FIG. 3 illustrates a placement of the semiconductor die between thethrough vias in accordance with some embodiments.

FIG. 4 illustrates an encapsulation of the reference via, the throughvias, and the semiconductor die in accordance with some embodiments.

FIG. 5 illustrates a formation of a redistribution layer in accordancewith some embodiments.

FIGS. 6A-6B illustrate a removal of a carrier in accordance with someembodiments.

FIG. 7 illustrates a patterning of a polymer layer in accordance withsome embodiments.

FIG. 8 illustrates a placement of external connections in accordancewith some embodiments.

FIG. 9 illustrates a placement of a protective layer in accordance withsome embodiments.

FIG. 10 illustrates a bonding of a first package and a second package inaccordance with some embodiments.

FIGS. 11A-11B illustrate an exposure of the reference vias in accordancewith some embodiments.

FIGS. 12A-12B illustrate a formation of a shield coating in accordancewith some embodiments.

FIG. 13 illustrates a singulation of the shield coating in accordancewith some embodiments.

FIGS. 14A-14B illustrate an exposure of a sidewall of the reference viain accordance with some embodiments.

FIGS. 15A-15B illustrate a formation of the shield coating in connectionwith a sidewall of the reference via in accordance with an embodiment.

FIG. 16 illustrates a singulation of the shield coating in accordancewith some embodiments.

FIGS. 17A-17B illustrate an exposure of both a top surface and asidewall of the reference via in accordance with some embodiments.

FIGS. 18A-18B illustrate a formation of the shield coating in connectionwith the top surface and the sidewall of the reference via in accordancewith some embodiments.

FIG. 19 illustrates a singulation of the shield coating in accordancewith some embodiments.

FIG. 20 illustrates different shapes that may be used for the referencevia in accordance with some embodiments.

FIGS. 21A-21B illustrates a fin shaped reference via in accordance withsome embodiments.

FIGS. 22A-22B illustrate other shapes for the reference via inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

With reference now to FIG. 1, there is shown a first carrier substrate101 with an adhesive layer 103, a polymer layer 105, and a first seedlayer 107 over the first carrier substrate 101. The first carriersubstrate 101 comprises, for example, silicon based materials, such asglass or silicon oxide, or other materials, such as aluminum oxide,combinations of any of these materials, or the like. The first carriersubstrate 101 is planar in order to accommodate an attachment ofsemiconductor devices such as a first semiconductor device 201 and asecond semiconductor device 301 (not illustrated in FIG. 1 butillustrated and discussed below with respect to FIGS. 2-3).

The adhesive layer 103 is placed on the first carrier substrate 101 inorder to assist in the adherence of overlying structures (e.g., thepolymer layer 105). In an embodiment the adhesive layer 103 may comprisean ultra-violet glue, which loses its adhesive properties when exposedto ultra-violet light. However, other types of adhesives, such aspressure sensitive adhesives, radiation curable adhesives, epoxies, alight to heat conversion (LTHC) material, combinations of these, or thelike, may also be used. The adhesive layer 103 may be placed onto thefirst carrier substrate 101 in a semi-liquid or gel form, which isreadily deformable under pressure.

The polymer layer 105 is placed over the adhesive layer 103 and isutilized in order to provide protection to, e.g., the firstsemiconductor device 201 and the second semiconductor device 301 oncethe first semiconductor device 201 and the second semiconductor device301 have been attached. In an embodiment the polymer layer 105 may bepolybenzoxazole (PBO), although any suitable material, such as polyimideor a polyimide derivative, may alternatively be utilized. The polymerlayer 105 may be placed using, e.g., a spin-coating process to athickness of between about 0.5 μm and about 10 μm, such as about 5 μm,although any suitable method and thickness may alternatively be used.

The first seed layer 107 is formed over the polymer layer 105. In anembodiment the first seed layer 107 is a thin layer of a conductivematerial that aids in the formation of a thicker layer during subsequentprocessing steps. The first seed layer 107 may comprise a layer oftitanium about 1,000 Å thick followed by a layer of copper about 5,000 Åthick. The first seed layer 107 may be created using processes such asphysical vapor deposition, evaporation, or PECVD processes, or metalfoil laminating process, or the like, depending upon the desiredmaterials. The first seed layer 107 may be formed to have a thickness ofbetween about 0.3 μm and about 1 μm, such as about 0.5 μm.

FIG. 1 also illustrates a placement and patterning of a photoresist 109over the first seed layer 107. In an embodiment the photoresist 109 maybe placed on the first seed layer 107 using, e.g., a spin coatingtechnique to a height of between about 50 μm and about 250 μm, such asabout 120 μm. Once in place, the photoresist 109 may then be patternedby exposing the photoresist 109 to a patterned energy source (e.g., apatterned light source) so as to induce a chemical reaction, therebyinducing a physical change in those portions of the photoresist 109exposed to the patterned light source. A developer is then applied tothe exposed photoresist 109 to take advantage of the physical changesand selectively remove either the exposed portion of the photoresist 109or the unexposed portion of the photoresist 109, depending upon thedesired pattern.

In an embodiment the pattern formed into the photoresist 109 is apattern for vias 111 and reference vias 113. The vias 111 are formed insuch a placement as to be located on different sides of subsequentlyattached devices such as the first semiconductor device 201 and thesecond semiconductor device 301. However, any suitable arrangement forthe pattern of vias 111, such as by being located such that the firstsemiconductor device 201 and the second semiconductor device are placedon opposing sides of the vias 111, may alternatively be utilized.

The reference vias 113 may be positioned in order to provide a referencevoltage (such as a ground reference) through the package but not to anoverlying semiconductor device (such as the first semiconductor device201 or the second semiconductor device 301). In another embodiment thereference vias 113 may be positioned in order to provide a referencepotential to a shield coating 1201 (not illustrated in FIG. 1 butillustrated and described further below with respect to FIG. 12).However, any suitable positioning may alternatively be used.

In an embodiment the reference vias 113 may be formed in a cylindricalshape with a first diameter D₁ of between about 70 μm and about 400 μm,such as about 190 μm. However, any suitable shape (some of which aredescribed further below with respect to FIGS. 21A-22B) may also be used.Additionally, other suitable dimensions may also be utilized. All suchshapes and dimensions are fully intended to be included within the scopeof the embodiments.

In an embodiment the vias 111 and the reference vias 113 are formedwithin the photoresist 109. In an embodiment the vias 111 and thereference vias 113 comprise one or more conductive materials, such ascopper, tungsten, other conductive metals, or the like, and may beformed, for example, by electroplating, electroless plating, or thelike. In an embodiment, an electroplating process is used wherein thefirst seed layer 107 and the photoresist 109 are submerged or immersedin an electroplating solution. The first seed layer 107 surface iselectrically connected to the negative side of an external DC powersupply such that the first seed layer 107 functions as the cathode inthe electroplating process. A solid conductive anode, such as a copperanode, is also immersed in the solution and is attached to the positiveside of the power supply. The atoms from the anode are dissolved intothe solution, from which the cathode, e.g., the first seed layer 107,acquires the dissolved atoms, thereby plating the exposed conductiveareas of the first seed layer 107 within the opening of the photoresist109.

Once the vias 111 and the reference vias 113 have been formed using thephotoresist 109 and the first seed layer 107, the photoresist 109 may beremoved using a suitable removal process (not illustrated in FIG. 1 butseen in FIG. 3 below). In an embodiment, a plasma ashing process may beused to remove the photoresist 109, whereby the temperature of thephotoresist 109 may be increased until the photoresist 109 experiences athermal decomposition and may be removed. However, any other suitableprocess, such as a wet strip, may alternatively be utilized. The removalof the photoresist 109 may expose the underlying portions of the firstseed layer 107.

Once exposed a removal of the exposed portions of the first seed layer107 may be performed (not illustrated in FIG. 1 but seen in FIG. 3below). In an embodiment the exposed portions of the first seed layer107 (e.g., those portions that are not covered by the vias 111 and thereference vias 113) may be removed by, for example, a wet or dry etchingprocess. For example, in a dry etching process reactants may be directedtowards the first seed layer 107 using the vias 111 and the referencevias 113 as masks. In another embodiment, etchants may be sprayed orotherwise put into contact with the first seed layer 107 in order toremove the exposed portions of the first seed layer 107. After theexposed portion of the first seed layer 107 has been etched away, aportion of the polymer layer 105 is exposed between the vias 111 and thereference vias 113.

FIG. 2 illustrates a first semiconductor device 201 that will beattached to the polymer layer 105 within the vias 111 (not illustratedin FIG. 2 but illustrated and described below with respect to FIG. 3).In an embodiment the first semiconductor device 201 comprises a firstsubstrate 203, first active devices (not individually illustrated),first metallization layers 205, first contact pads 207, a firstpassivation layer 211, and first external connectors 209. The firstsubstrate 203 may comprise bulk silicon, doped or undoped, or an activelayer of a silicon-on-insulator (SOI) substrate. Generally, an SOIsubstrate comprises a layer of a semiconductor material such as silicon,germanium, silicon germanium, SOI, silicon germanium on insulator(SGOI), or combinations thereof. Other substrates that may be usedinclude multi-layered substrates, gradient substrates, or hybridorientation substrates.

The first active devices comprise a wide variety of active devices andpassive devices such as capacitors, resistors, inductors and the likethat may be used to generate the desired structural and functionalfeatures of the design for the first semiconductor device 201. The firstactive devices may be formed using any suitable methods either within orelse on the first substrate 203.

The first metallization layers 205 are formed over the first substrate203 and the first active devices and are designed to connect the variousactive devices to form functional circuitry. In an embodiment the firstmetallization layers 205 are formed of alternating layers of dielectricand conductive material and may be formed through any suitable process(such as deposition, damascene, dual damascene, etc.). In an embodimentthere may be four layers of metallization separated from the firstsubstrate 203 by at least one interlayer dielectric layer (ILD), but theprecise number of first metallization layers 205 is dependent upon thedesign of the first semiconductor device 201.

The first contact pads 207 may be formed over and in electrical contactwith the first metallization layers 205. The first contact pads 207 maycomprise aluminum, but other materials, such as copper, mayalternatively be used. The first contact pads 207 may be formed using adeposition process, such as sputtering, to form a layer of material (notshown) and portions of the layer of material may then be removed througha suitable process (such as photolithographic masking and etching) toform the first contact pads 207. However, any other suitable process maybe utilized to form the first contact pads 207. The first contact padsmay be formed to have a thickness of between about 0.5 μm and about 4μm, such as about 1.45 μm.

The first passivation layer 211 may be formed on the first substrate 203over the first metallization layers 205 and the first contact pads 207.The first passivation layer 211 may be made of one or more suitabledielectric materials such as silicon oxide, silicon nitride, low-kdielectrics such as carbon doped oxides, extremely low-k dielectricssuch as porous carbon doped silicon dioxide, combinations of these, orthe like. The first passivation layer 211 may be formed through aprocess such as chemical vapor deposition (CVD), although any suitableprocess may be utilized, and may have a thickness between about 0.5 μmand about 5 μm, such as about 9.25 KÅ.

The first external connectors 209 may be formed to provide conductiveregions for contact between the first contact pads 207 and, e.g., aredistribution layer (RDL) 501 (not illustrated in FIG. 2 butillustrated and described below with respect to FIG. 5). In anembodiment the first external connectors 209 may be conductive pillarsand may be formed by initially forming a photoresist (not shown) overthe first passivation layer 211 to a thickness between about 5 μm toabout 20 μm, such as about 10 μm. The photoresist may be patterned toexpose portions of the first passivation layer 211 through which theconductive pillars will extend. Once patterned, the photoresist may thenbe used as a mask to remove the desired portions of the firstpassivation layer 211, thereby exposing those portions of the underlyingfirst contact pads 207 to which the first external connectors 209 willmake contact.

The first external connectors 209 may be formed within the openings ofboth the first passivation layer 211 and the photoresist. The firstexternal connectors 209 may be formed from a conductive material such ascopper, although other conductive materials such as nickel, gold,solder, metal alloy, combinations of these, or the like may also beused. Additionally, the first external connectors 209 may be formedusing a process such as electroplating, by which an electric current isrun through the conductive portions of the first contact pads 207 towhich the first external connectors 209 are desired to be formed, andthe first contact pads 207 are immersed in a solution. The solution andthe electric current deposit, e.g., copper, within the openings in orderto fill and/or overfill the openings of the photoresist and the firstpassivation layer 211, thereby forming the first external connectors209. Excess conductive material and photoresist outside of the openingsof the first passivation layer 211 may then be removed using, forexample, an ashing process, a chemical mechanical polish (CMP) process,combinations of these, or the like.

However, as one of ordinary skill in the art will recognize, the abovedescribed process to form the first external connectors 209 is merelyone such description, and is not meant to limit the embodiments to thisexact process. Rather, the described process is intended to be merelyillustrative, as any suitable process for forming the first externalconnectors 209 may alternatively be utilized. All suitable processes arefully intended to be included within the scope of the presentembodiments.

A first die attach film 217 may be placed on an opposite side of thefirst substrate 203 in order to assist in the attachment of the firstsemiconductor device 201 to the polymer layer 105. In an embodiment thefirst die attach film 217 is an epoxy resin, a phenol resin, acrylicrubber, silica filler, or a combination thereof, and is applied using alamination technique. However, any other suitable alternative materialand method of formation may alternatively be utilized.

FIG. 3 illustrates a placement of the first semiconductor device 201onto the polymer layer 105 along with a placement of the secondsemiconductor device 301. In an embodiment the second semiconductordevice 301 may comprise a second substrate 303, second active devices(not individually illustrated), second metallization layers 305, secondcontact pads 307, a second passivation layer 311, a second externalconnectors 309, and a second die attach film 317. In an embodiment thesecond substrate 303, the second active devices, the secondmetallization layers 305, the second contact pads 307, the secondpassivation layer 311, the second external connectors 309, and thesecond die attach film 317 may be similar to the first substrate 203,the first active devices, the first metallization layers 205, the firstcontact pads 207, the first passivation layer 211, the first externalconnectors 209, and the first die attach film 217 as described abovewith respect to FIG. 2, although they may also be different.

In an embodiment the first semiconductor device 201 and the secondsemiconductor device 301 may be placed onto the polymer layer 105between different ones of the vias 111 or the reference vias 113. In anembodiment the first semiconductor device 201 and the secondsemiconductor device 301 may be placed using, e.g., a pick and placeprocess. However, any other method of placing the first semiconductordevice 201 and the second semiconductor device 301 onto the polymerlayer 105 may also be utilized.

FIG. 4 illustrates an encapsulation of the vias 111, the reference vias113, the first semiconductor device 201 and the second semiconductordevice 301. The encapsulation may be performed in a molding device (notindividually illustrated in FIG. 4), which may comprise a top moldingportion and a bottom molding portion separable from the top moldingportion. When the top molding portion is lowered to be adjacent to thebottom molding portion, a molding cavity may be formed for the firstcarrier substrate 101, the vias 111, the reference vias 113, the firstsemiconductor device 201, and the second semiconductor device 301.

During the encapsulation process the top molding portion may be placedadjacent to the bottom molding portion, thereby enclosing the firstcarrier substrate 101, the vias 111, the reference vias 113, the firstsemiconductor device 201, and the second semiconductor device 301 withinthe molding cavity. Once enclosed, the top molding portion and thebottom molding portion may form an airtight seal in order to control theinflux and outflux of gasses from the molding cavity. Once sealed, anencapsulant 401 may be placed within the molding cavity. The encapsulant401 may be a molding compound resin such as polyimide, PPS, PEEK, PES, aheat resistant crystal resin, combinations of these, or the like. Theencapsulant 401 may be placed within the molding cavity prior to thealignment of the top molding portion and the bottom molding portion, orelse may be injected into the molding cavity through an injection port.

Once the encapsulant 401 has been placed into the molding cavity suchthat the encapsulant 401 encapsulates the first carrier substrate 101,the vias 111, the reference vias 113, the first semiconductor device201, and the second semiconductor device 301, the encapsulant 401 may becured in order to harden the encapsulant 401 for optimum protection.While the exact curing process is dependent at least in part on theparticular material chosen for the encapsulant 401, in an embodiment inwhich molding compound is chosen as the encapsulant 401, the curingcould occur through a process such as heating the encapsulant 401 tobetween about 100 ° C. and about 130 ° C., such as about 125 ° C. forabout 60 sec to about 3600 sec, such as about 600 sec. Additionally,initiators and/or catalysts may be included within the encapsulant 401to better control the curing process.

However, as one having ordinary skill in the art will recognize, thecuring process described above is merely an exemplary process and is notmeant to limit the current embodiments. Other curing processes, such asirradiation or even allowing the encapsulant 401 to harden at ambienttemperature, may alternatively be used. Any suitable curing process maybe used, and all such processes are fully intended to be included withinthe scope of the embodiments discussed herein.

FIG. 4 also illustrates a thinning of the encapsulant 401 in order toexpose the vias 111, the reference vias 113, the first semiconductordevice 201, and the second semiconductor device 301 for furtherprocessing. The thinning may be performed, e.g., using a mechanicalgrinding or chemical mechanical polishing (CMP) process whereby chemicaletchants and abrasives are utilized to react and grind away theencapsulant 401, the first semiconductor device 201 and the secondsemiconductor device 301 until the vias 111, the reference vias 113, thefirst external connectors 209 (on the first semiconductor device 201),and the second external connectors 309 (on the second semiconductordevice 301) have been exposed. As such, the first semiconductor device201, the second semiconductor device 301, the vias 111, and thereference vias 113 may have a planar surface that is also planar withthe encapsulant 401.

However, while the CMP process described above is presented as oneillustrative embodiment, it is not intended to be limiting to theembodiments. Any other suitable removal process may be used to thin theencapsulant 401, the first semiconductor device 201, and the secondsemiconductor device 301 and expose the vias 111. For example, a seriesof chemical etches may be utilized. This process and any other suitableprocess may be utilized to thin the encapsulant 401, the firstsemiconductor device 201, and the second semiconductor device 301, andall such processes are fully intended to be included within the scope ofthe embodiments.

FIG. 5 illustrates a formation of the RDL 501 in order to interconnectthe first semiconductor device 201, the second semiconductor device 301,the vias 111, the reference vias 113 and third external connectors 505.By using the RDL 501 to interconnect the first semiconductor device 201and the second semiconductor device 301, the first semiconductor device201 and the second semiconductor device 301 may have a pin count ofgreater than 1000.

In an embodiment the RDL 501 may be formed by initially forming a seedlayer (not shown) of a titanium copper alloy through a suitableformation process such as CVD or sputtering. A photoresist (also notshown) may then be formed to cover the seed layer, and the photoresistmay then be patterned to expose those portions of the seed layer thatare located where the RDL 501 is desired to be located.

Once the photoresist has been formed and patterned, a conductivematerial, such as copper, may be formed on the seed layer through adeposition process such as plating. The conductive material may beformed to have a thickness of between about 1 μm and about 10 μm, suchas about 5 μm. However, while the material and methods discussed aresuitable to form the conductive material, these materials are merelyexemplary. Any other suitable materials, such as AlCu or Au, and anyother suitable processes of formation, such as CVD or PVD, may be usedto form the RDL 501.

Once the conductive material has been formed, the photoresist may beremoved through a suitable removal process such as ashing. Additionally,after the removal of the photoresist, those portions of the seed layerthat were covered by the photoresist may be removed through, forexample, a suitable etch process using the conductive material as amask.

FIG. 5 also illustrates a formation of a third passivation layer 503over the RDL 501 in order to provide protection and isolation for theRDL 501 and the other underlying structures. In an embodiment the thirdpassivation layer 503 may be polybenzoxazole (PBO), although anysuitable material, such as polyimide or a polyimide derivative, may beutilized. The third passivation layer 503 may be placed using, e.g., aspin-coating process to a thickness of between about 5 μm and about 25μm, such as about 7 μm, although any suitable method and thickness mayalternatively be used.

In an embodiment the thickness of the structure from the thirdpassivation layer 503 to the polymer layer 105 may be less than or equalto about 200 μm. By making this thickness as thin as possible, theoverall structure may be utilized in various small size applications,such as cell phones and the like, while still maintaining the desiredfunctionality. However, as one of ordinary skill in the art willrecognize, the precise thickness of the structure may be dependent atleast in part upon the overall design for the unit and, as such, anysuitable thickness may alternatively be utilized.

Additionally, the RDL 501 is formed to interconnect the reference vias113 with one of the third external connectors 505 (with only a singleone of the reference vias 113 actually illustrated as being connected).In an embodiment the one of the third external connectors 505 that isconnected to the reference vias 113 may be connected (through, e.g., aprinted circuit board that is not illustrated) to a reference voltage,such as a reference voltage, although any suitable reference bias may beutilized.

Also, while only a single RDL 501 is illustrated in FIG. 5, this isintended for clarity and is not intended to limit the embodiments.Rather, any suitable number of conductive and passivation layers, suchas three RDL 501 layers, may be formed by repeating the above describedprocess to form the RDL 501. Any suitable number of layers may beutilized.

FIG. 5 further illustrates a formation of the third external connectors505 to make electrical contact with the RDL 501. In an embodiment afterthe third passivation layer 503 has been formed, an opening may be madethrough the third passivation layer 503 by removing portions of thethird passivation layer 503 to expose at least a portion of theunderlying RDL 501. The opening allows for contact between the RDL 501and the third external connectors 505. The opening may be formed using asuitable photolithographic mask and etching process, although anysuitable process to expose portions of the RDL 501 may be used.

In an embodiment the third external connectors 505 may be placed on theRDL 501 through the third passivation layer 503 and may be a ball gridarray (BGA) which comprises a eutectic material such as solder, althoughany suitable materials may alternatively be used. Optionally, anunderbump metallization may be utilized between the third externalconnectors 505 and the RDL 501. In an embodiment in which the thirdexternal connectors 505 are solder bumps, the third external connectors505 may be formed using a ball drop method, such as a direct ball dropprocess. Alternatively, the solder bumps may be formed by initiallyforming a layer of tin through any suitable method such as evaporation,electroplating, printing, solder transfer, and then performing a reflowin order to shape the material into the desired bump shape. Once thethird external connectors 505 have been formed, a test may be performedto ensure that the structure is suitable for further processing.

FIG. 6A illustrates a debonding of the first carrier substrate 101 fromthe first semiconductor device 201 and the second semiconductor device301. In an embodiment the third external connectors 505 and, hence, thestructure including the first semiconductor device 201 and the secondsemiconductor device 301, may be attached to a ring structure 601. Thering structure 601 may be a metal ring intended to provide support andstability for the structure during and after the debonding process. Inan embodiment the third external connectors 505, the first semiconductordevice 201, and the second semiconductor device 301 are attached to thering structure using, e.g., a ultraviolet tape 603, although any othersuitable adhesive or attachment may alternatively be used.

Once the third external connectors 505 and, hence, the structureincluding the first semiconductor device 201 and the secondsemiconductor device 301 are attached to the ring structure 601, thefirst carrier substrate 101 may be debonded from the structure includingthe first semiconductor device 201 and the second semiconductor device301 using, e.g., a thermal process to alter the adhesive properties ofthe adhesive layer 103. In a particular embodiment an energy source suchas an ultraviolet (UV) laser, a carbon dioxide (CO₂) laser, or aninfrared (IR) laser, is utilized to irradiate and heat the adhesivelayer 103 until the adhesive layer 103 loses at least some of itsadhesive properties. Once performed, the first carrier substrate 101 andthe adhesive layer 103 may be physically separated and removed from thestructure comprising the third external connectors 505, the firstsemiconductor device 201, and the second semiconductor device 301.

FIG. 6B illustrates another embodiment for debonding the first carriersubstrate 101 from the first semiconductor device 201 and the secondsemiconductor device 301. In this embodiment the third externalconnectors 505 may be attached to a second carrier substrate 605 using,e.g., a first glue 607. In an embodiment the second carrier substrate605 is similar to the first carrier substrate 101, although it may alsobe different. Once attached, the adhesive layer 103 may be irradiatedand the adhesive layer 103 and the first carrier substrate 101 may bephysically removed.

Returning to an embodiment in which the ring structure 601 is utilized,FIG. 7 illustrates a patterning of the polymer layer 105 in order toform first openings 703 and expose the vias 111 (along with theassociated first seed layer 107). In an embodiment the polymer layer 105may be patterned using, e.g., a laser drilling method, by which a laseris directed towards those portions of the polymer layer 105 which aredesired to be removed in order to expose the underlying vias 111. Duringthe laser drilling process the drill energy may be in a range from 0.1mJ to about 60 mJ, and a drill angle of about 0 degree (perpendicular tothe polymer layer 105) to about 85 degrees to normal of the polymerlayer 105. In an embodiment the patterning may be formed to formopenings over the vias 111 to have a width of between about 70 μm andabout 300 μm, such as about 200 μm.

In another embodiment, the polymer layer 105 may be patterned byinitially applying a photoresist (not individually illustrated in FIG.7) to the polymer layer 105 and then exposing the photoresist to apatterned energy source (e.g., a patterned light source) so as to inducea chemical reaction, thereby inducing a physical change in thoseportions of the photoresist exposed to the patterned light source. Adeveloper is then applied to the exposed photoresist to take advantageof the physical changes and selectively remove either the exposedportion of the photoresist or the unexposed portion of the photoresist,depending upon the desired pattern, and the underlying exposed portionof the polymer layer 105 are removed with, e.g., a dry etch process.However, any other suitable method for patterning the polymer layer 105,such as a plasma etch (PLDC), may be utilized.

FIG. 8 illustrates a placement of backside ball pads 801 within thefirst openings 703 in order to protect the now exposed vias 111. In anembodiment the backside ball pads 801 may comprise a conductive materialsuch as solder on paste or an organic solderability preservative (OSP),although any suitable material may alternatively be utilized. In anembodiment the backside ball pads 801 may be applied using a stencil,although any suitable method of application may alternatively beutilized, and then reflowed in order to form a bump shape.

FIG. 8 additionally illustrates an optional leveling or coining processthat may be performed on the backside ball pads 801. In an embodimentthe backside ball pads 801 may be physically shaped using, e.g., astencil that is placed around each of the backside ball pads 801 and apress that applies pressure to physically deform the portions of thebackside ball pads 801 and to flatten the top surface of the backsideball pads 801.

FIG. 9 illustrates a placement and patterning of an optional backsideprotection layer 901 over the backside ball pads 801, effectivelysealing the joint between the backside ball pads 801 and the vias 111from intrusion by moisture. In an embodiment the backside protectionlayer 901 may be a protective material such as a PBO, Solder Resistance(SR), Lamination Compound (LC) tape, Ajinomoto build-up film (ABF),non-conductive paste (NCP), non-conductive film (NCF), patternedunderfill (PUF), warpage improvement adhesive (WIA), liquid moldingcompound V9, combinations of these, or the like. However, any suitablematerial may also be used. The backside protection layer 901 may beapplied using a process such as screen printing, lamination, spincoating, or the like, to a thickness of between about 1 μm to about 100μm.

FIG. 9 also illustrates that, once the backside protection layer 901 hasbeen placed, the backside protection layer 901 may be patterned in orderto expose the backside ball pads 801. In an embodiment the patterningmay be formed to form second openings 905 over the backside ball pads801, and the second openings 905 may be formed to have a diameter ofbetween about 30 μm and about 300 μm, such as about 150 μm. In anembodiment, the backside protection layer 901 may be patterned byinitially applying a photoresist (not individually illustrated in FIG.9) to the backside protection layer 901 and then exposing thephotoresist to a patterned energy source (e.g., a patterned lightsource) so as to induce a chemical reaction, thereby inducing a physicalchange in those portions of the photoresist exposed to the patternedlight source. A developer is then applied to the exposed photoresist totake advantage of the physical changes and selectively remove either theexposed portion of the photoresist or the unexposed portion of thephotoresist, depending upon the desired pattern, and the underlyingexposed portion of the backside protection layer 901 are removed with,c.g., a dry etch process. However, any other suitable method forpatterning the backside protection layer 901 may be utilized.

FIG. 9 also illustrates a placement of fourth external connections 903within the openings of the patterned backside protection layer 901. Inan embodiment the fourth external connections 903 may be formed toprovide an external connection between the backside ball pads 801 and,e.g., a first package 1000 and a second package 1019 (not illustrated inFIG. 9 but illustrated and discussed below with respect to FIG. 10). Thefourth external connections 903 may be contact bumps such as microbumpsor controlled collapse chip connection (C4) bumps and may comprise amaterial such as tin, or other suitable materials, such as solder onpast, silver, or copper. In an embodiment in which the fourth externalconnections 903 are tin solder bumps, the fourth external connections903 may be formed by initially forming a layer of tin through anysuitable method such as evaporation, electroplating, printing, soldertransfer, ball placement, etc, to a thickness of, e.g., about 100 μm.Once a layer of tin has been formed on the structure, a reflow isperformed in order to shape the material into the desired bump shape.

FIG. 10 illustrates a bonding of the backside ball pads 801 to a firstpackage 1000. In an embodiment the first package 1000 may comprise athird substrate 1003, a third semiconductor device 1005, a fourthsemiconductor device 1007 (bonded to the third semiconductor device1005), third contact pads 1009 (for electrical connection to the fourthexternal connections 903), and a second encapsulant 1011. In anembodiment the third substrate 1003 may be, e.g., a packaging substratecomprising internal interconnects (e.g., through substrate vias 1015) toconnect the third semiconductor device 1005 and the fourth semiconductordevice 1007 to the backside ball pads 801.

Alternatively, the third substrate 1003 may be an interposer used as anintermediate substrate to connect the third semiconductor device 1005and the fourth semiconductor device 1007 to the backside ball pads 801.In this embodiment the third substrate 1003 may be, e.g., a siliconsubstrate, doped or undoped, or an active layer of asilicon-on-insulator (SOI) substrate. However, the third substrate 1003may alternatively be a glass substrate, a ceramic substrate, a polymersubstrate, or any other substrate that may provide a suitable protectionand/or interconnection functionality. These and any other suitablematerials may alternatively be used for the third substrate 1003.

The third semiconductor device 1005 may be a semiconductor devicedesigned for an intended purpose such as being a logic die, a centralprocessing unit (CPU) die, a memory die (e.g., a DRAM die), combinationsof these, or the like. In an embodiment the third semiconductor device1005 comprises integrated circuit devices, such as transistors,capacitors, inductors, resistors, first metallization layers (notshown), and the like, therein, as desired for a particularfunctionality. In an embodiment the third semiconductor device 1005 isdesigned and manufactured to work in conjunction with or concurrentlywith the first semiconductor device 201.

The fourth semiconductor device 1007 may be similar to the thirdsemiconductor device 1005. For example, the fourth semiconductor device1007 may be a semiconductor device designed for an intended purpose(e.g., a DRAM die) and comprising integrated circuit devices for adesired functionality. In an embodiment the fourth semiconductor device1007 is designed to work in conjunction with or concurrently with thefirst semiconductor device 201 and/or the third semiconductor device1005.

The fourth semiconductor device 1007 may be bonded to the thirdsemiconductor device 1005. In an embodiment the fourth semiconductordevice 1007 is only physically bonded with the third semiconductordevice 1005, such as by using an adhesive. In this embodiment the fourthsemiconductor device 1007 and the third semiconductor device 1005 may beelectrically connected to the third substrate 1003 using, e.g., wirebonds 1017, although any suitable electrical bonding may be utilized.

Alternatively, the fourth semiconductor device 1007 may be bonded to thethird semiconductor device 1005 both physically and electrically. Inthis embodiment the fourth semiconductor device 1007 may comprise fourthexternal connections (not separately illustrated in FIG. 10) thatconnect with fifth external connection (also not separately illustratedin FIG. 10) on the third semiconductor device 1005 in order tointerconnect the fourth semiconductor device 1007 with the thirdsemiconductor device 1005.

The third contact pads 1009 may be formed on the third substrate 1003 toform electrical connections between the third semiconductor device 1005and, e.g., the fourth external connections 903. In an embodiment thethird contact pads 1009 may be formed over and in electrical contactwith electrical routing (such as through substrate vias 1015) within thethird substrate 1003. The third contact pads 1009 may comprise aluminum,but other materials, such as copper, may alternatively be used. Thethird contact pads 1009 may be formed using a deposition process, suchas sputtering, to form a layer of material (not shown) and portions ofthe layer of material may then be removed through a suitable process(such as photolithographic masking and etching) to form the thirdcontact pads 1009. However, any other suitable process may be utilizedto form the third contact pads 1009. The third contact pads 1009 may beformed to have a thickness of between about 0.5 μm and about 4 μm, suchas about 1.45 μm.

The second encapsulant 1011 may be used to encapsulate and protect thethird semiconductor device 1005, the fourth semiconductor device 1007,and the third substrate 1003. In an embodiment the second encapsulant1011 may be a molding compound and may be placed using a molding device(not illustrated in FIG. 10). For example, the third substrate 1003, thethird semiconductor device 1005, and the fourth semiconductor device1007 may be placed within a cavity of the molding device, and the cavitymay be hermetically sealed. The second encapsulant 1011 may be placedwithin the cavity either before the cavity is hermetically sealed orelse may be injected into the cavity through an injection port. In anembodiment the second encapsulant 1011 may be a molding compound resinsuch as polyimide, PPS, PEEK, PES, a heat resistant crystal resin,combinations of these, or the like.

Once the second encapsulant 1011 has been placed into the cavity suchthat the second encapsulant 1011 encapsulates the region around thethird substrate 1003, the third semiconductor device 1005, and thefourth semiconductor device 1007, the second encapsulant 1011 may becured in order to harden the second encapsulant 1011 for optimumprotection. While the exact curing process is dependent at least in parton the particular material chosen for the second encapsulant 1011, in anembodiment in which molding compound is chosen as the second encapsulant1011, the curing could occur through a process such as heating thesecond encapsulant 1011 to between about 100° C. and about 130° C., suchas about 125° C. for about 60 sec to about 3000 sec, such as about 600sec. Additionally, initiators and/or catalysts may be included withinthe second encapsulant 1011 to better control the curing process.

However, as one having ordinary skill in the art will recognize, thecuring process described above is merely an exemplary process and is notmeant to limit the current embodiments. Other curing processes, such asirradiation or even allowing the second encapsulant 1011 to harden atambient temperature, may be used. Any suitable curing process may beused, and all such processes are fully intended to be included withinthe scope of the embodiments discussed herein.

Once the fourth external connections 903 have been formed, the fourthexternal connections 903 are aligned with and placed into physicalcontact with the backside ball pads 801, and a bonding is performed. Forexample, in an embodiment in which the fourth external connections 903are solder bumps, the bonding process may comprise a reflow processwhereby the temperature of the fourth external connections 903 is raisedto a point where the fourth external connections 903 will liquefy andflow, thereby bonding the first package 1000 to the backside ball pads801 once the fourth external connections 903 resolidifies.

By placing the first package 1000 (which may be, e.g., a DRAM package)over the first semiconductor device 301, the first package 1000 isplaced over a first receiving region 1002 designed to receive the firstpackage 1000. In an embodiment the first receiving region 1002 has asize and shape determined by the desired size of the first package 1000which is placed onto the first receiving region 1002. However, thereference vias 113 are located outside of the first receiving region1002 in a direction parallel with a major surface of the encapsulant 401such that the first package 1000 is not directly over the reference vias113.

FIG. 10 additionally illustrates the bonding of a second package 1019 tothe backside ball pads 801. In an embodiment the second package 1019 maybe similar to the first package 1000, and may be bonded to the backsideball pads 801 utilizing similar processes. However, the second package1019 may also be different from the first package 1000.

FIG. 10 also illustrates a placement of an underfill material 1021between the first package 1000, the second package 1019, and thebackside protection layer 901. In an embodiment the underfill material1021 is a protective material used to cushion and support the firstpackage 1000, the second package 1019 and the backside protection layer901 from operational and environmental degradation, such as stressescaused by the generation of heat during operation. The underfillmaterial 1021 may be injected or otherwise formed in the space betweenthe first package 1000, the second package 1019, and the backsideprotection layer 901 and may, for example, comprise a liquid epoxy thatis dispensed between the first package 1000, the second package 1019,and the backside protection layer 901, and then cured to harden.

FIGS. 11A-11B illustrate a first singulation process (represented inFIG. 11A by the dashed box 1101) that is utilized to begin singulatingand forming a first integrated fan out package-on-package (InFO-POP)structure 1103 and a second integrated fan out package-on-package(InFO-POP) structure 1105 (with FIG. 11B illustrating an enlarged viewof the dashed box in FIG. 11A labeled 1103). In an embodiment the firstsingulation process 1101 may be performed by using a saw blade (notseparately illustrated) to slice through the underfill material 1021,the backside protection layer 901 and the polymer layer 105 between thevias 111 and within a scribe region that surrounds the first InFO-POPstructure 1103 and the second InFO-POP structure 1105 and also to exposean upper surface of the reference vias 113. However, as one of ordinaryskill in the art will recognize, utilizing a saw blade for the firstsingulation process 1101 is merely one illustrative embodiment and isnot intended to be limiting. Any method for performing the firstsingulation process 1101, such as utilizing one or more etches, may beutilized. These methods and any other suitable methods may be utilizedto singulate the first InFO-POP structure 1103.

Additionally, while FIG. 11A is illustrated as using a single cut toexpose multiple ones of the reference vias 113, this is intended to beillustrative and is not intended to limit the embodiments. Rather, anysuitable number of cuts, such as one cut to expose each of the referencevias 113, or a combination of cuts that expose multiple ones of thereference vias 113, or any other combination, may be used. All suitablecombinations of cuts, etches, or other singulation processes are fullyintended to be included within the scope of the embodiments.

Looking closer at FIG. 11B, the first seed layer 107 and the vias 111remain insulated by the encapsulant 401. However, by utilizing the firstsingulation process 1101 to expose the top surface of the reference vias113, the first singulation process 1101 can, in some embodiments, removea portion of the reference vias 113, causing a difference in heightbetween the reference vias 113 (and those portions of the encapsulant401 that were affected by the first singulation process 1101) and theportions of the encapsulant 401 that were not affected by the firstsingulation process 1101 as well as forming a different height from thevias 111. For example, after the first singulation process 1101 has beenperformed, the reference vias 113 may have a first height H₁ of betweenabout 80 and about 250 μm, such as about 120 μm, while the encapsulant401 may have a second height H₂ that is greater than the first heightH₁, such as by being between about 100 μm and about 300 μm, such asabout 150 μm. Additionally, because the vias 111 may have the samesecond height H₂, (see FIG. 4), the first height H1 of the referencevias 111 may be smaller than the second height H2 of the vias 111 aswell.

FIGS. 12A-12B illustrate that, once an upper surface of the referencevias 113 have been exposed, a shield coating 1201 may be formed over thefirst InFO-POP structure 1103 and the second InFO-POP structure 1105 andin physical and electrical connection with the exposed top surface ofthe reference vias 113 (with FIG. 12B illustrating an enlarged view ofFIG. 12A's dashed box 1204). In an embodiment the shield coating 1201may comprise multiple conformal layers of materials, wherein thethickness of each layer remains relative constant as each layer followsthe contours of the underlying structure upon which it is formed, inorder to shield the first InFO-POP structure 1103 and the secondInFO-POP structure 1105, although if desired a single layer of materialmay be utilized.

In an embodiment the shield coating 1201 is a multi-layer structure,such as a bi-layer structure or a tri-layer structure with an adhesionlayer 1203, a high-conductivity metal 1205, and an oxidation preventionmaterial 1207. The adhesion layer 1203 is utilized to help thehigh-conductivity metal 1205 adhere to the underlying first InFO-POPstructure 1103 and the second InFO-POP structure 1105. In an embodimentthe adhesion layer 1203 may be a conductive metal such as titanium,although any suitable conductive material that can help adhere thehigh-conductivity metal may alternatively be used. The adhesion layer1203 may be formed using, e.g., a deposition process such as physicalvapor deposition (PVD), chemical vapor deposition (CVD), atomic layerdeposition (ALD), spray coating, electroless plating, or the like, to athickness of between about 0.05 μm and about 5 μm, such as about 0.1 μm.

After the adhesion layer 1203 has been formed, the high-conductivitymetal 1205 may be formed to provide the desired shielding for the firstInFO-POP structure 1103 and the second InFO-POP structure 1105. In anembodiment the high-conductivity metal 1205 may be a material such ascopper, silver, a palladium/copper alloy, or the like, and may be formedto a thickness of between about 2 μm and about 10 μm, such as about 6μm. The high-conductivity metal 1205 may be formed using a process suchas PVD, CVD, ALD, plating, or spraying.

Optionally, if desired, once the high-conductivity metal 1205 has beenformed, the high-conductivity metal 1205 may be protected from oxidationby applying the oxidation prevention material 1207. In an embodiment theoxidation prevention material 1207 may be a protective material such asnickel, although any other suitable material, such as nickel or SUS, maybe used. The oxidation prevention material 1207 may be deposited by aprocess such as PVD, CVD, ALD, plating, or the like, to a thickness ofbetween about 0.1 μm and about 15 μm, such as about 0.3 μm.

During the formation of the shield coating 1201, the shield coating 1201will be formed in physical and electrical connection with the exposedtop surfaces of one or more of the reference vias 113 and in physicalcontact with the encapsulant 401 and the underfill material 1021. Byforming the shield coating 1201 in electrical connection with thereference vias 113, the shield coating 1201 can be electricallyconnected to the reference voltage (e.g., the ground voltage) throughthe third external connectors 505. As such, the reference voltage (e.g.,ground) can be applied to the shield coating 1201 and assist inshielding the first InFO-POP structure 1103 and the second InFO-POPstructure 1105.

FIG. 13 illustrates a second singulation process (represented in FIG. 13by the dashed box labeled 1301) that may be used to separate the firstInFO-POP structure 1103 and the second InFO-POP structure 1105 (whereinthe first package 1000 is attached to an integrated fan-out package(InFO package) 1303). Additionally, for clarity the shield coating 1201in FIG. 13 is illustrated as a single layer and not as the tri-layerstructure illustrated in FIGS. 12A-12B. In an embodiment the secondsingulation process 1301 may be performed by using a saw blade (notshown) to slice through the shield coating 1201 and the encapsulant 401between the reference vias 113, thereby separating one section fromanother to form the first InFO-POP structure 1103 and the secondInFO-POP structure 1105. However, as one of ordinary skill in the artwill recognize, utilizing a saw blade to singulate the first InFO-POPstructure 1103 and the second InFO-POP structure 1105 is merely oneillustrative embodiment and is not intended to be limiting. Alternativemethods for singulating the first InFO-POP structure 1103 and the secondInFO-POP structure 1105, such as utilizing one or more etches toseparate the first InFO-POP structure 1103 and the second InFO-POPstructure 1105, may be utilized, either separately or in combination.These methods and any other suitable methods may alternatively beutilized to singulate the first InFO-POP structure 1103 and the secondInFO-POP structure 1105.

By utilizing the reference vias 113 in order to connect the shieldcoating 1201 to a reference potential, a conformal shielding structurefor an InFO-PoP may be achieved without also enlarging the InFO die sizeby adding an additional ground pad formation at the formation of thevias 111 and without yet another ball at the InFO die edge (e.g., a DRAMball at the InFO die edge). Additionally, without the inclusion of aground pad, there is also no extra process for grinding the ground padduring formation, so additional costs savings may be achieved. Finally,there is no need to have a grounding at the front side redistributionlayer or the back side redistribution layer just for the conformalshield coating 1201, which reduces any concerns about aspect ratios forthe shield coating 1201.

FIGS. 14A-14B illustrate another embodiment in which, instead of usingboth the first singulation process 1101 and the second singulationprocess 1301 to expose the reference vias 113 and then separate thefirst InFO-POP structure 1103 and the second InFO-POP structure 1105, asingle, combined third singulation process (represented in FIG. 14A bythe dashed line 1401) is utilized to both separate the first InFO-POPstructure 1103 and the second InFO-POP structure 1105 as well as exposea sidewall of the reference vias 113 (with FIG. 14B illustrating anenlarged view of the dashed box in FIG. 14A labeled 1403). In thisembodiment the third singulation process 1401 may be similar to thefirst singulation process 1101, such as by being a saw cutting process.

However, instead of exposing a top surface of the reference vias 113 asdescribed above with respect to FIGS. 11A-11B, the third singulationprocess 1401 exposes a sidewall of the reference vias 113, either bycutting through the encapsulant 401 adjacent to the reference vias 113or else by actually cutting through the reference vias 113 themselves.Any suitable method of using the third singulation process 1401 toexpose a sidewall of the reference vias 113 without exposing the topsurface of the reference vias 113 (which remains covered by the polymerlayer 105) may be used.

FIGS. 15A-15B illustrate a formation of the shield coating 1201 over thefirst InFO-POP structure 1103 and the second InFO-POP structure 1105after the sidewall of the reference vias 113 have been exposed (withFIG. 15B illustrating an enlarged view of the dashed box in FIG. 15Alabeled 1504). In this embodiment, because the first InFO-POP structure1103 and the second InFO-POP structure 1105 have been fully separatedalready, the first InFO-POP structure 1103 and the second InFO-POPstructure 1105 are moved to a first support structure 1501.Additionally, the third external connectors 505 are covered in order toprevent contact between the shield coating 1201 and the third externalconnectors 505.

In an embodiment the first InFO-POP structure 1103 and the secondInFO-POP structure 1105 may be moved from the ring structure 601 to, forexample, the first support structure 1501, which may be, e.g., a gluetape, although any alternative support structure may be utilized. In anembodiment, the first InFO-POP structure 1103 and the second InFO-POPstructure 1105 may be moved using a pick and place process, although anysuitable method of moving the first InFO-POP structure 1103 and thesecond InFO-POP structure 1105 may be used.

In an embodiment the first support structure 1501 may further comprise aglue layer 1503 that may be used to adhere cover the third externalconnectors 505. Additionally, the glue layer 1503 may also be used tocover the third external connectors 505 so that the deposition of theshield coating 1201 will not short circuit to the third externalconnectors 505. For example, the glue layer 1503 may be any suitableadhesive, such as an acrylic base adhesive, a silicon adhesive, or PSA,although any other suitable adhesive or covering material may be used.

FIGS. 15A-15B additionally illustrate the formation of the shieldcoating 1201 after the first InFO-POP structure 1103 and the secondInFO-POP structure 1105 have been placed on the first support structure1501 and the third external connectors 505 have been covered. In anembodiment the shield coating 1201 may be formed from similar materialsand using similar processes as described above with respect to FIGS.12A-12B. For example, the shield coating 1201 may be a tri-layerstructure comprising the adhesion layer 1203, the high-conductivitymetal 1205, and the oxidation prevention material 1207, or may be abi-layer structure comprising the adhesion layer 1203 and thehigh-conductivity metal 1205, formed using a PVD or CVD process,although any suitable methods and materials may alternatively beutilized.

Looking more closely at FIG. 15B, because the reference vias 113 willhave a sidewall exposed by the third singulation process 1401, when theshield coating 1201 is formed, the shield coating 1201 will be inphysical and electrical connection with the exposed sidewall of thereference vias 113 and in physical connection with the encapsulant 401(around the reference vias 113 and not specifically shown in theparticular cross-section of FIG. 15B) and the underfill material 1021.As such, the reference voltage applied to the reference vias 113(through, e.g., the third external connectors 505), will also be appliedto the shield coating 1201 (through the sidewall) which now covers thefirst InFO-POP structure 1103 and the second InFO-POP structure 1105. Assuch, the reference voltage (e.g., ground) may be used to help shieldthe first InFO-POP structure 1103 and the second InFO-POP structure1105.

FIG. 16 illustrates a fourth singulation process (represented in FIG. 16by the dashed box labeled 1601) that may be used to separate the firstInFO-POP structure 1103 and the second InFO-POP structure 1105 after theshield coating 1201 has been applied. In an embodiment the fourthsingulation process 1601 may be similar to the second singulationprocess 1301 described above with respect to FIG. 13. For example, thefourth singulation process 1601 may be a saw used to cut through theshield coating 1201 and separate the first InFO-POP structure 1103 andthe second InFO-POP structure 1105. However, any suitable singulationprocess may alternatively be utilized.

FIGS. 17A-17B illustrate yet another embodiment in which, rather thanexposing only either the top surface or the sidewall of the referencevias 113, both the top surface and the sidewalls of the reference vias113 are exposed (with FIG. 17B illustrating an enlarged view of thedashed box in FIG. 17A labeled 1703). In this embodiment the firstsingulation process 1101 (as described above with respect to FIGS.11A-11B) may be utilized first to expose the top surface of thereference vias 113, as well as caused the reference vias 113 to have thefirst height H₁ less than the second height H₂ of the surroundingencapsulant 401. Once the top surfaces are exposed, the thirdsingulation process 1401 (as described above with respect to FIGS.14A-14B) may be utilized to both singulate the first InFO-POP structure1103 and the second InFO-POP structure 1105 and also to expose at leastone sidewall of the reference vias 113.

FIG. 17B illustrates the close up view of the reference vias 113 afterthe top surface and the sidewall has been exposed. As can be seen thepolymer layer 105 has been removed from the top surface of the referencevias 113 by the first singulation process 1101, and the molding compound113 has been removed from the sidewall of the reference vias 113 by thethird singulation process 1401. As such, both the top surface and thesidewalls of the reference vias 113 are available for furtherprocessing.

However, while the process described above uses the first singulationprocess 1101 first and then uses the third singulation process 1401second, this is intended to be illustrative and is not intended to limitthe embodiments. Rather, any suitable process performed in any suitableorder may alternatively be utilized. All such processes that may be usedto expose both the top surface and the sidewalls of the reference vias113 are fully intended to be included within the scope of theembodiments.

FIGS. 18A-18B illustrate a removal of the first InFO-POP structure 1103and the second InFO-POP structure 1105 from the ring structure 601 andthe placement of the first InFO-POP structure 1103 and the secondInFO-POP structure 1105 onto the first support structure 1501 (with FIG.18B illustrating an enlarged view of the dashed box in FIG. 18A labeled1803). In an embodiment the first InFO-POP structure 1103 and the secondInFO-POP structure 1105 may be moved as described above with respect toFIG. 15 (e.g., a pick and place process), although any suitable processfor moving the first InFO-POP structure 1103 and the second InFO-POPstructure 1105 may alternatively be used.

Once the first InFO-POP structure 1103 and the second InFO-POP structure1105 have been moved (and the third external connectors 505 covered by,e.g., the glue layer 1503), the shield coating 1201 may be applied. Inan embodiment the shield coating 1201 may be formed from similarmaterials and using similar processes as described above with respect toFIGS. 12A-12B. For example, the shield coating 1201 may be a tri-layerstructure comprising the adhesion layer 1203, the high-conductivitymetal 1205, and the oxidation prevention material 1207 or a bi-layercoating comprising the adhesion layer 1203 and the high-conductivitymetal 1205 formed using a PVD or CVD process, although any suitablemethods and materials may alternatively be utilized. The shield coating1201 in this embodiment will be in physical contact with the encapsulant401, the underfill material 1021, the top of the reference vias 113, andthe sidewall of the reference vias 113.

Looking more closely at FIG. 18B, because the reference vias 113 willhave both the top surface and the sidewall exposed, when the shieldcoating 1201 is formed the shield coating 1201 will be in physical andelectrical connection with both the top surface as well as the exposedsidewall of the reference vias 113. As such, the reference voltageapplied to the reference vias 113 (through, e.g., the third externalconnectors 505), will also be applied to the shield coating 1201 whichnow covers the first InFO-POP structure 1103 and the second InFO-POPstructure 1105. As such, the reference voltage (e.g., ground) may beused to help shield the first InFO-POP structure 1103 and the secondInFO-POP structure 1105.

FIG. 19 illustrates that a fourth singulation process 1601 may be usedto separate the first InFO-POP structure 1103 and the second InFO-POPstructure 1105 after the shield coating 1201 has been applied in thisembodiment. In an embodiment the fourth singulation process 1601 may besimilar to the second singulation process 1301 described above withrespect to FIG. 13. For example, the fourth singulation process 1601 maybe a saw used to cut through the shield coating 1201 and separate thefirst InFO-POP structure 1103 and the second InFO-POP structure 1105.However, any suitable singulation process may alternatively be utilized.

As previously mentioned, by utilizing the reference vias 113 in order toconnect the shield coating 1201 to a reference potential, a conformalshielding structure for an InFO-PoP may be achieved without alsoenlarging the InFO die size by adding an additional ground pad formationat the formation of the vias 111 and without yet another ball at theInFO die edge (e.g., a DRAM ball at the InFO die edge). Additionally,without the inclusion of a ground pad, there is also no extra processfor grinding the ground pad during formation, so additional costssavings may be achieved. Finally, there is no need to have a groundingat the front side redistribution layer or the back side redistributionlayer just for the conformal shield coating 1201, which reduces anyconcerns about aspect ratios for the shield coating 1201.

FIG. 20 illustrates a top down view of the reference vias 113 along withthe vias 111 as they have been formed in a semiconductor wafer with aplurality of packages 2001, with four of the plurality of packages 2001meeting in a middle section of FIG. 20. In this embodiment the referencevias 113 are formed in a cylindrical shape (as can be seen from thecircular top down view). As can be seen, the reference vias 113 isformed in a corner of each of the separate ones of the plurality ofpackages 2001. However, the cylindrical shape of the reference vias 113is not intended to be limiting and any other suitable shape mayalternatively be utilized.

FIGS. 21A-21B illustrate another example of a shape that may be utilizedfor the reference vias 113. In this embodiment the reference vias 113may be shaped as a first fin 2101 with a first extension 2103. In anembodiment the first fin 2101 may comprise a circular portion 2105 with,for example, a second diameter D₂ of between about 70 μm and about 400μm, such as about 190 μm. The first fin 2101 may additionally have thefirst extension 2103 with a first width W₁ of between about 50 μm andabout 200 μm, such as about 140 μm. In an embodiment the first extension1203 may extend (prior to being exposed) to an edge of the semiconductordevice, with a first length L₁ of between about 100 μm and about 350 μm,such as about 200 μm.

FIG. 21B illustrates a top down view of the first fin 2101 incorporatedinto adjacent ones of the semiconductor devices. As can be seen,multiple ones of the first fin 2101 may have first extensions 2103 thatextend towards one another prior to the devices being singulated. Whenthe first fins 2101 are exposed (using, e.g., the first singulationprocess 1101, the third singulation process 1401, or a combinationthereof), either the circular portion 2105 or the first extension 2103,or both, may be exposed for connection with the subsequently depositedshield coating 1201.

FIGS. 22A-22B illustrate other shapes that may be utilized to form thereference vias 113. FIG. 22A illustrates a second fin 2201 similar tothe first fin 2101 in that the second fin 2201 has the circular portion2105 and also has the first extension 2103. Additionally, however, thesecond fin 2201, as illustrated in FIG. 22A, has two additionalextensions 2203 that extend at right angles from the first extension2103. In an embodiment the two additional extensions 2203 may have thefirst width W₁ and may extend away from the first extension 2103 asecond length L₂ of between about 30 μm and about 200 μm, such as about100 μm.

FIG. 22B illustrates a right-angle shape 2205 that may be used insteadof the first fin 2101 or the second fin 2201. In this embodiment theshape may have an overall second width W₂ of between about 100 μm andabout 600 μm, such as about 250 μm, and an overall third length L₃ ofbetween about 100 μm and about 600 μm, such as about 250 μm.Additionally, in this embodiment the right angle shape 2205 may beformed with a third width W₃ of between about 70 μm and about 400 μm,such as about 190 μm. However, any suitable shape may alternatively beutilized.

Additionally, while four shapes have been described in detail in theabove descriptions, these descriptions are intended to be illustrativeand are not intended to limit the embodiments. Rather, any suitableshapes, with any suitable dimensions, may alternatively be utilized. Allsuch shapes and dimensions are fully intended to be included within thescope of the embodiments.

In accordance with an embodiment, a semiconductor device comprising asemiconductor die encased in an encapsulant is provided. First viasextend through the encapsulant and are separated from the semiconductordie by the encapsulant. At least one reference via extends through theencapsulant, wherein a scribe region surround the semiconductor die, thefirst vias, and the at least one reference via, wherein thesemiconductor die is the only semiconductor die within the scriberegion. A second semiconductor device electrically connected to thefirst vias but not electrically connected to the at least one referencevia.

In accordance with another embodiment, a semiconductor device comprisinga semiconductor die and a first set of through vias separated from thesemiconductor die by an encapsulant is provided. A reference via isseparated from the semiconductor die and the first set of through viasby the encapsulant, and a shield coating in physical contact with afirst surface of the reference via.

In accordance with yet another embodiment, a method of manufacturing asemiconductor device comprising encapsulating a semiconductor die, afirst set of through vias, and a reference via with an encapsulant isprovided. The first set of through vias and the reference via areexposed with a planarization process on a first side of thesemiconductor die. The first set of through vias on a second side of thesemiconductor die opposite the first side are connected to a secondsemiconductor die, and, after the connecting the first set of throughvias, a first surface of the reference via is exposed with a singulationprocess.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A semiconductor device comprising: a first via extending away from aredistribution layer a first distance; a second via extending away fromthe redistribution layer a second distance greater than the firstdistance; an external connection electrically connecting the second viawith a semiconductor device; and a continuous layer in physical contactwith the first via, the continuous layer extending over thesemiconductor device.
 2. A semiconductor device comprising: a continuouslayer in contact with a first via and a second via, the first via andthe second via being located with an encapsulant and having a sameheight; a first semiconductor device located between the continuouslayer and the encapsulant; a second semiconductor device embedded withinthe encapsulant; and a third via electrically connecting the firstsemiconductor device to a redistribution layer on an opposite side ofthe encapsulant from the first semiconductor device, the third via beingtaller than the first via.
 3. A semiconductor device comprising: a firstredistribution layer; a first semiconductor device over the firstredistribution layer; a first via adjacent to the first semiconductordevice on the first redistribution layer; a second via on the firstredistribution layer; a second semiconductor device over the firstsemiconductor device and electrically connected to the first via; and alid covering the second semiconductor device and extending to be inphysical contact with the second via.
 4. The semiconductor device ofclaim 1, wherein the continuous layer is in physical contact with only asingle side of the first via.
 5. The semiconductor device of claim 4,wherein the continuous layer is in physical contact with a sidewall ofthe first via, the sidewall being oriented in a direction that isperpendicular with a major surface of the semiconductor device, themajor surface facing the second via.
 6. The semiconductor device ofclaim 4, wherein the continuous layer is in physical contact with a topsurface of the first via, the top surface being parallel with a majorsurface of the semiconductor device, the major surface facing the secondvia.
 7. The semiconductor device of claim 1, wherein the continuouslayer is in physical contact with a first surface of the first via and asecond surface of the first via, the first surface being perpendicularto the second surface.
 8. The semiconductor device of claim 1, furthercomprising an encapsulant extending away from the redistribution layerthe second distance.
 9. The semiconductor device of claim 1, wherein thefirst distance is between about 80 μm and about 250 μm.
 10. Thesemiconductor device of claim 9, wherein the second distance is betweenabout 100 μm and 300 μm.
 11. The semiconductor device of claim 2,wherein the continuous layer comprises: an adhesion layer; ahigh-conductivity metal; and an oxidation prevention material.
 12. Thesemiconductor device of claim 11, wherein the adhesion layer is a layerof titanium with a thickness of between about 0.05 μm and about 0.1 μm.13. The semiconductor device of claim 12, wherein the high-conductivitymetal is copper with a thickness of between about 2 μm and about 6 μm.14. The semiconductor device of claim 13, wherein the oxidationprevention material is nickel with a thickness of between about 0.1 μmand about 0.3 μm.
 15. The semiconductor device of claim 11, wherein eachlayer of the continuous layer is conformal.
 16. The semiconductor deviceof claim 3, further comprising an encapsulant surrounding the firstsemiconductor device and the first via.
 17. The semiconductor device ofclaim 16, wherein the encapsulant has an “L” shaped structure adjacentto the lid.
 18. The semiconductor device of claim 16, wherein theencapsulant has a surface that is planar with a surface of the first viaand offset from a surface of the second via.
 19. The semiconductordevice of claim 16, wherein the encapsulant has a surface that is planarwith both a surface of the first via and a surface of the second via,the surface of the first via facing the second semiconductor device. 20.The semiconductor device of claim 16, wherein the lid contacts asidewall of the second via.